Department of Electronics and Electrical Engineering
Indian Institute of Technology Guwahati
Guwahati-781039, India

EEE Department, IIT Guwahati

Dr. Ankush Bag

Ankush Bag


Ph.D., IIT Kharagpur
Designation: Assistant Professor

Joined the institute in December, 2021.

Contact Details
Office Address : EEE Department, IIT Guwahati, Guwahati-781039, India.
Phone: +91-361-258-3282 (Office)
Email: ankushbag

PhD:     Compound Semiconductor Devices, Indian Institute of Technology (IIT), Kharagpur
ME:      Power Engineering, Jadavpur University (JU), Kolkata
BTech: Electronics and Communication Engg., West Bengal University of Technology, Kolkata

Aug 2016 – Dec 2021, Assistant Professor, IIT Mandi

Research Areas

  • Power Semiconductor Devices
  • Deep UV Photodetector
  • III-Oxide and III-Nitride Semiconductors
  • Epitaxial Growth (CVD and MBE)

Selected Publications

Journal papers

  • Arpit Nandi, Kanchan Rana and Ankush Bag,"Design and Analysis of P-GaN/N-Ga2O3 based Junction Barrier Schottky Diodes", IEEE Transactions on Electron Devices 68 (2021) 6052-6058.
  • Ashish Kumar, Arpit Nandi and Ankush Bag, "Exceptional Responsivity (>6 kA/W) and Dark-current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction based Deep UV Photodetector ", IEEE Transactions on Electron Devices 68 (2021) 144-151.
  • Manoj Yadav, Arnab Mondal, Satinder Sharma, and Ankush Bag, "Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diodes on Si (100)", IEEE Transactions on Device and Materials Reliability 21 (2021) 613-619.
  • Manoj Yadav, Arnab Mondal, Satinder Sharma, and Ankush Bag, "Substrate Orientation Dependent Current Transport Mechanisms in β-Ga2O3/Si based Schottky Barrier Diodes ", Journal of Vacuum Science and Technology A 39 (2021) 033203.
  • Arnab Mondal, Manoj Kumar Yadav, and Ankush Bag, “ Transition from Thin Film to Nanostructure in Low Pressure Chemical Vapor Deposition Growth of β -Ga2O3: Impact of Metal Gallium Source ”, Thin Solid Films, 709 (2020) 138234.
  • Arnab Mondal, Manoj Kumar Yadav, Shivangi Shringi, and Ankush Bag, “Extremely Low Dark Current and Detection Range Extension of Ga2O3 UV Photodetector using Sn Alloyed Nanostructures”, Nanotechnology, 31(2020) 294002.
  • Manoj Kumar Yadav, Arnab Mondal, Subhashis Das, Satinder K. Sharma, and Ankush Bag, “ Impact of Annealing Temperature on Band-alignment of PLD Grown Ga2O3/Si (100) Heterointerface ”, Journal of Alloys and Compounds,815(2020) 153052.
  • Ankush Bag, Palash Das, Rahul Kumar, Partha Mukhopadhyay, Sanjib Kabi, Shubhankar Majumder and Dhrubes Biswas, “2DEG Modulation in Double Quantum Well Enhancement Mode Nitride HEMT”, Physica E: Low-Dimensional Systems and Nanostructures, 74 (2015) 59 - 64.

Conferences papers

  • Kanchan Singh Rana, Ankush Bag, “Bench-marking High Power Switching Performance of Ga2O3 SBD with SiC Devices ”, IEEE Power Electronics Drives and Energy System (IEEE PEDES) Jaipur, India 2020.
  • Manoj K Yadav, Arnab Mondal, Satinder K Sharma, Ankush Bag, “Performance Evaluation of Ga2O3 Schottky Barrier Diodes on Si (100) and Si (111) using PLD and Sputtering Techniques ”, International Workshop on Physics of Semiconductor Devices(IWPSD) Kolkata, India 2019.
  • Indu Kumari, Santu Nandi, Ankush Bag, “Performance Evaluation of GaN-based Selective UV Photodetector by Varying Metal-Semiconductor-Metal Geometry ”, IEEE Electron Devices Technology and Manufacturing (EDTM) Conference Singapore, 2019.
  • Manoj Yadav, Satinder Sharma and Ankush Bag, “Interface Trap Charge Density characterization of Au/β-Ga2O3 Schottky Barrier Diodes on Si(001) ”, International Conference in Emerging Electronics, IISC, Bangalore, India, 2018 (Best Poster Award).
  • Ankush Bag and Dhrubes Biswas, “Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and Reflectance”, International Conference on Nitride Semiconductors (ICNS) 2015, Beijing, China.
  • Ankush Bag, Palash Das, Saptarsi Ghosh, Partha Mukhopadhyay, Syed M. Dinara, Rahul Kumar, Apurba Chakraborty, Dhrubes Biswas, “Fowler-Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Barrier Current”, International Conference in Emerging Electronics, IISC, Bangalore, India, 2014 (Best Paper Award).