|
Sl. No
|
Name of the Authors
|
Title
|
Proceedings
|
|
9 |
Arindam Pal,
D. K. Goswami |
Growth of Ag on Si(111)-(7x7) Surfaces: Scaling
Study |
Solid State Physics (India),
54, (2009) 575-576. |
|
8
|
Liu, X., Zhang, Y.,
Goswami, D. K., Okasinski, J. S., Salaita, K., Sun, P., Bedzyk, M.
J., and Mirkin, C. A.
|
Controlled evolution of a polymer single
crystals
|
Fifth
International Conference on Synchrotron
Radiation, Chicago,SRMS5 Conference, (2006) 266.
|
|
7
|
Bhattacharjee, K., Goswami, D. K and Dev, B. N.
|
Electronic Structure and Stability of
Atomic-Scale-Height Ag Islands on Si(111)-(7x7)
surfaces: An in-situ Scanning Tunneling
Spectroscopy Study
|
"5th
International Conference on Atomic Level
Characterizations for New Materials and
Devices", Dec.4-9, 2005, Hawaii, USA,JSPS-141
committee ACTIVITY Report. (2005) 160.
|
|
6 |
Goswami, D. K., Bhattacharjee, K., Jayannavar,
A. M. and Dev, B. N.
|
Single
Electron Tunneling and the Effect of Quantum
capacitance on Ag Quantum Dot Structures,
|
"5th
International Conference on Atomic Level
Characterizations for New Materials and
Devices", Dec.4-9, 2005, Hawaii, USA.
JSPS-141 committee ACTIVITY Report. (2005) 174.
|
|
5
|
Goswami, D. K., Bhattacharjee, K., Satpati, B.,
Roy, S., Satyam, P. V. and Dev, B. N
|
Growth
of self-assembled nanostructures by molecular
beam epitaxy and their characterizations by
scanning tunneling microscopy and spectroscopy.
|
INAE
Conference on Nanotechnology, Indian National
Academy of Engineering, (2003) 308-316.
|
|
4
|
Goswami, D. K., Bhattacharjee, K. and Dev, B. N.
|
Electronic structure of the Ag layers on Si(111)
surfaces: A scanning tunneling microscopy study.
|
Solid State Physics (India), 45, (2002) 333-334
|
|
3
|
Satpati, B.,
Goswami,
D. K., Dash, A. K., Satyam, P. V.
and Dev, B. N
|
Self-assembled gold silicide wire growth on
Si(110) surface: A transmission electron
microscopy study.
|
Solid Physics State (India), 44, (2001) 265-266.
|
|
2
|
Goswami, D. K., Satpati, B., Satyam,
P. V.
and Dev, B. N.
|
Growth
of self-assembled Ge nanoislands on Si(100) by
molecular beam epitaxy
|
Solid State Physics (India), 44, (2001) 267-268.
|
|
1
|
Das,
A. K.,
Ghose, S. K.,
Goswami, D. K. and
Dev, B. N.
|
Determination of the surface diffusion
activation energy by X-ray reflectometry.
|
Solid State Physics (India) 43, (2000) 328-329.
|
|
