Devices & Chips


Name of the chip: SANGAI
Technical specification: Inductors, 2.4 GHz VCO, 4 bit flash ADC, Amplifier
Technology used: The process is UMC L180 1P6M MM/RFCMOS
Brief description of functionality: 4 Multilayer Inductors, 2.4 GHz VCO, 4 bit flash ADC, NMOS based Amplifier for GHz operation.
Name of the foundary where chip has been fabricated: 0.18 μm process of United Microelectronics Corporation (UMC) through the mini@sic programme of Europractice IC Service.
Silicon area: 1525μm×1525μm
Name of Sponsor: Department of Information Technology (DIT), Government of India, through project "Special Manpower Development Project in VLSI Design and related software (SMDP II)"


Name of the chip: India Chip Analog 3
Technical specification: 48 pins QFN package
Technology used: 0.18um
Brief description of functionality: 0.5 V 480 nW preamplifier, CMOS low power Precision temperature sensor, Inductive coupled Interchip Transceiver.
Name of the foundary where chip has been fabricated: UMC
Silicon area: 1525μm×1525μm
Name of Sponsor: Department of Information Technology (DIT), Government of India, through project "Special Manpower Development Project in VLSI Design and related software (SMDP II)"


Device: Fabrication and characterization of Carbon Nanotube Field Effect Transistors (CNFETs)
Name of Sponsor: Indian Nanoelectronics User Program (INUP) at Center of Excellence in Nanoelectronics (CEN) Indian Institute of Technology Bombay, India

Sensor: High Aspect Ratio Structures Fabricated over SAW Resonator
Name of Sponsor: Indian Nanoelectronics User's Programme, Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bangalore, India